Samsung 990 EVO 1TB SSD – High-Speed NVMe Storage
The Samsung 990 EVO 1TB SSD is a high-performance NVMe internal SSD engineered for fast boot times, rapid app loading, and seamless file transfers. This SSD leverages the PCIe Gen4.0 x4 and PCIe Gen5.0 x2 interfaces to deliver speeds far above traditional SATA drives, making the Samsung 990 EVO NVMe an excellent choice for gaming, productivity, and creative workloads.
Hybrid PCIe Gen4 & Gen5 Interface for Versatile Compatibility
The 990 EVO supports both PCIe 4.0 x4 and PCIe 5.0 x2 lanes via NVMe 2.0, giving you broad platform compatibility. On PCIe Gen4 systems, it reaches up to 5,000 MB/s sequential read and 4,200 MB/s sequential write, cutting load times and accelerating workflows.
Enhanced Performance for Everyday Computing
This drive uses Samsung’s advanced V-NAND 3-TLC and in-house controller to deliver consistent performance across tasks. Whether you’re launching the OS, loading large game assets, or editing media, the 990 EVO 1TB M.2 SSD provides faster responsiveness than traditional SSDs.
Sleek M.2 Form Factor and Durable Design
The M.2 2280 form factor keeps the SSD compact while offering ample storage. Its durable construction and efficient power use make it ideal for laptops, desktops, and professional rigs. Samsung’s Magician software lets you monitor drive health, optimize performance, and update firmware.
Ideal Storage Upgrade for Gamers and Professionals
Whether upgrading a gaming rig or accelerating a workstation, the Samsung 990 EVO 1TB SSD combines high speed, broad PCIe support, and Samsung reliability to elevate system performance across everyday tasks and demanding applications.
SPECIFICATIONS
- Brand: Samsung
Model: 990 EVO 1TB NVMe M.2 SSD - General:
- Storage Capacity: 1 TB
- Form Factor: M.2 2280
- Interface: PCIe® Gen4.0 x4 / PCIe® Gen5.0 x2 (NVMe™ 2.0 compatible)
- Warranty: 5-year limited warranty
- Performance:
- Sequential Read: Up to 5,000 MB/s
- Sequential Write: Up to 4,200 MB/s
- Random Performance (Approx): Up to ~700K IOPS read / ~800K IOPS write
- Protocol: NVMe 2.0
- NAND & Controller:
- NAND Type: Samsung V-NAND 3-TLC
- Controller: Samsung in-house controller




